b40c800g, b80c800g, b125c800g, b250c800g, b380c800g www.vishay.com vishay semiconductors revision: 08-jul-13 1 document number: 88534 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 glass passivated single-p hase bridge rectifier features ? ideal for printed circuit boards ? high case dielectric strength ? high surge current capability ? typical i r less than 0.1 a ? solder dip 275 c max. 10 s, per jesd 22-b106 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications general purpose use in ac/dc bridge full wave rectification for power supply, adapter, char ger, lighting ballaster on consumers, and home appliances applications. mechanical data case: wog ? molding compound meets ul 94 v-0 flammability rating base p/n-e4 - rohs-co mpliant, commercial grade terminals: silver plated leads, solderable per j-std-002 and jesd22-b102 polarity: as marked on body primary characteristics package wog i f(av) 0.9 a v rrm 65 v, 125 v, 200 v, 400 v, 600 v i fsm 45 a i r 10 a v f at i f = 0.9 a 1.0 v t j max. 125 c diode variations quad case style wog + ? ~ ~ + ? ~ ~ e4 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol b40 c800g b80 c800g b125 c800g b250 c800g b380 c800g unit maximum repetitive pe ak reverse voltage v rrm 65 125 200 400 600 v maximum rms input voltage r- and c-load v rms 40 80 125 250 380 v maximum average forward output current for free air operation at t a = 45 c r- and l-load i f(av) 0.9 a c-load 0.8 maximum non-repetiti ve peak voltage v rsm 100 200 350 600 1000 v maximum dc blocking voltage v dc 65 125 200 400 600 v maximum peak working voltage v rwm 90 180 300 600 900 v maximum repetiti ve peak forward surge current i frm 10 a peak forward surge current single sine-wave on rated load i fsm 45 a rating for fusing at t j = 125 c (t < 100 ms) i 2 t 10 a 2 s minimum series resistor c-load at v rms = 10 % r t 1.0 2.0 4.0 8.0 12 ? maximum load capacitance + 50 % ? - 10 % c l 5000 2500 1000 500 200 f operating junction temperature range t j - 40 to + 125 c storage temperature range t stg - 40 to + 150 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol b40 c800g b80 c800g b125 c800g b250 c800g b380 c800g unit maximum instantaneous forward voltage drop per diode 0.9 a v f 1.0 v maximum reverse current at rated repetitive peak voltage per diode i r 10 a
b40c800g, b80c800g, b125c800g, b250c800g, b380c800g www.vishay.com vishay semiconductors revision: 08-jul-13 2 document number: 88534 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) thermal resistance from j unction to ambient and from junction to lead mounted on pcb at 0.375" (9.5 mm) lead lengths with 0.22" x 0.22" (5.5 mm x 5.5 mm) copper pads ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - derating curves output rectified current for b40c800g...b125c800g fig. 2 - derating curves output rectified current for b250c800g...b380c800g fig. 3 - maximum non-repetitive peak forward surge current per diode fig. 4 - typical forward characteristics per diode thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol b40 c800g b80 c800g b125 c800g b250 c800g b380 c800g unit typical thermal resistance (1) r ? ja 36 c/w r ? jl 11 ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode b380c800g-e4/51 1.12 51 100 plastic bag 20 40 60 0.2 0.4 0.6 0. 8 1.0 8 0 100 120 140 0 0 capaciti v e load 50 to 60 hz resisti v e or ind u cti v e load 0 - 10 ? 10 - 100 ? > 100 ? ambient temperat u re (?) bridge o u tp u t f u ll wa v e rectified c u rrent a v erage (a) p.c.b. copper pads 0.22 x 0.22" (5.5 x 5.5 mm) 0.375" (9.5 mm) 60 8 0 100 140 0.2 0.6 0. 8 1.0 0.4 0 0 20 40 120 capaciti v e load 50 to 60 hz resisti v e or ind u cti v e load 0 - 10 ? 10 - 100 ? > 100 ? ambient temperat u re (?) bridge o u tp u t f u ll wa v e rectified c u rrent a v erage (a) p.c.b. copper pads 0.22 x 0.22" (5.5 x 5.5 mm) 0.375" (9.5 mm) 1 10 100 0 10 20 30 40 50 1.0 cycle t j = 25 ? 10 ms single sine-wa v e nu mber of cycles at 50 hz peak for w ard s u rge c u rrent (a) 0.4 0. 8 1.2 10 100 1 0.1 0.01 0.6 1.0 1.4 instantaneo u s for w ard voltage (v) instantaneo u s for w ard s u rge c u rrent (a) t j = 25 ? p u lse width = 300 ? 1 % d u ty cycle
b40c800g, b80c800g, b125c800g, b250c800g, b380c800g www.vishay.com vishay semiconductors revision: 08-jul-13 3 document number: 88534 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical reverse charac teristics per diode fig. 6 - typical junction c apacitance per diode package outline dimensions in inches (millimeters) 20 40 8 0 100 0.01 0.1 1 10 0 60 t j = 100 ? t j = 25 ? percent of rated peak re v erse voltage (%) instantaneo u s re v erse c u rrent (?) 0.1 1 10 100 1 10 100 re v erse voltage (v) j u nction capacitance (pf) t j = 25 ? f = 1.0 mhz v sig = 50 mvp-p 0.220 (5.6) 0.160 (4.1) 0.3 88 (9. 8 6) 0.34 8 ( 8 . 8 4) 1.0 (25.4) mi n . 0.060 (1.52) 0.020 (0.51) 0.032 (0. 8 1) 0.02 8 (0.71) 0.34 8 ( 8 . 8 4) 0.30 8 (7. 8 2) 0.220 (5.6) 0.1 8 0 (4.6) 0.220 (5.6) 0.1 8 0 (4.6) case style wog
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